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A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Publication:
A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Date
2016
Journal article
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35251.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Procel, Luis Miguel
;
Crupi, Felice
;
Lionel, Trojman
;
Franco, Jacopo
;
Kaczer, Ben
Journal
IEEE Transactions on Device and Materials Reliability
Abstract
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1928
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1928
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations