A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs

dc.contributor.author	Procel, Luis Miguel
dc.contributor.author	Crupi, Felice
dc.contributor.author	Lionel, Trojman
dc.contributor.author	Franco, Jacopo
dc.contributor.author	Kaczer, Ben
dc.contributor.imecauthor	Franco, Jacopo
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.orcidimec	Franco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-23T13:52:48Z
dc.date.available	2021-10-23T13:52:48Z
dc.date.embargo	9999-12-31
dc.date.issued	2016
dc.identifier.issn	1530-4388
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/27168
dc.identifier.url	http://ieeexplore.ieee.org/document/7362163/
dc.source.beginpage	98
dc.source.endpage	100
dc.source.issue	1
dc.source.journal	IEEE Transactions on Device and Materials Reliability
dc.source.volume	16
dc.title	A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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