Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs

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Author(s)

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Hikavyy, Andriy

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Profijt, Harald

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Kubicek, Stefan

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Chiarella, Thomas

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Horiguchi, Naoto

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Bartlett, Gregory

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Bhargava, Nupur

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Metrics

1889 since deposited on 2021-10-23

Acq. date: 2025-10-25