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Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

dc.contributor.authorRossetto, Isabella
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRizzato, Vanessa
dc.contributor.authorRuzzarin, Maria
dc.contributor.authorFavaron, Andrea
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T14:23:29Z
dc.date.available2021-10-23T14:23:29Z
dc.date.issued2016
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27239
dc.sourceIIOimport
dc.titleStudy of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
dc.typeJournal article
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage547
dc.source.endpage551
dc.source.journalMicroelectronics Reliability
dc.source.volume64
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271416302712
imec.availabilityPublished - imec
imec.internalnotesSpecial issue ESREF 2016


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