Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico

Publication:

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Date

2016

Journal article

Simple item page Full metadata Statistics

Author(s)

;

;

;

;

;

;

;

;

;

;

;

Meneghesso, Gaudenzio

;

Zanoni, Enrico

Journal

Microelectronics Reliability

Metrics

1898 since deposited on 2021-10-23

Acq. date: 2026-01-08

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Date

Author(s)

Journal

Abstract

Description

Metrics

Views

Citations

Metrics

Views

Citations