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dc.contributor.authorRzepa, Gerhard
dc.contributor.authorWaltl, Michael
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorChiarella, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-23T14:28:58Z
dc.date.available2021-10-23T14:28:58Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27252
dc.sourceIIOimport
dc.titleComplete extraction of defect bands responsible for instabilities in n and pFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage208
dc.source.endpage209
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate13/06/2016
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlpFinFETs http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573437
imec.availabilityPublished - open access


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