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Understanding interface characteristics of hexagonal boron nitride-diamond heterostuctures paves way for high perforamnce opto-electronic device applications
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Understanding interface characteristics of hexagonal boron nitride-diamond heterostuctures paves way for high perforamnce opto-electronic device applications
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sankaran, Kamatchi
;
Hoang, Duc
;
Srinivasu, K.
;
Korneychuk, S.
;
Turner, S.
;
Pobedinskas, Paulius
;
Drijkoningen, Sien
;
Verbeeck, J.
;
D'Haen, Jan
;
Leou, K.C.
;
Lin, I.N.
;
Haenen, Ken
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Views
1920
since deposited on 2021-10-23
1
last month
Acq. date: 2026-02-25
Citations