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Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorVrielinck, Hemk
dc.contributor.authorLauwaert, Johan
dc.date.accessioned2021-10-23T14:55:44Z
dc.date.available2021-10-23T14:55:44Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27313
dc.sourceIIOimport
dc.titleSubstitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage11
dc.source.conference14th Symposium on High Purity and High Mobility Semiconductors
dc.source.conferencedate2/10/2016
dc.source.conferencelocationPennington USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/4/3.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol 75, Issue 4


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