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dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorOliveira, Alberto V.
dc.contributor.authorNi, Kai
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorAgopian, Paula G D
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorFleetwood, Dan
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T14:56:48Z
dc.date.available2021-10-23T14:56:48Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27315
dc.sourceIIOimport
dc.titleOn the assessment of electrically active defects in high-mobility materials and devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage300
dc.source.endpage303
dc.source.conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT
dc.source.conferencedate25/10/2016
dc.source.conferencelocationHangzhou China
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998903/
imec.availabilityPublished - imec


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