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Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorFerro, Valentina
dc.contributor.authorO'Sullivan, Barry
dc.date.accessioned2021-10-23T14:57:40Z
dc.date.available2021-10-23T14:57:40Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27317
dc.sourceIIOimport
dc.titleImpact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.source.peerreviewyes
dc.source.beginpage61
dc.source.endpage66
dc.source.conference16th Gettering and Defect Engineering in Semiconductors Conference - GADEST XVI
dc.source.conferencedate20/09/2015
dc.source.conferencelocationBad Staffelstein Germany
dc.identifier.urlhttp://www.scientific.net/SSP.242.61
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 242


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