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New fast distributed thermal model for analysis of GaN based power devices

dc.contributor.authorSodan, Vice
dc.contributor.authorMaggioni, Federica
dc.contributor.authorOprins, Herman
dc.contributor.authorStoffels, Steve
dc.contributor.authorBaelmans, Martine
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-23T15:04:45Z
dc.date.available2021-10-23T15:04:45Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27332
dc.sourceIIOimport
dc.titleNew fast distributed thermal model for analysis of GaN based power devices
dc.typeProceedings paper
dc.contributor.imecauthorOprins, Herman
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecOprins, Herman::0000-0003-0680-4969
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage172
dc.source.endpage175
dc.source.conference46th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2016
dc.source.conferencelocationLausanne Switzerland
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7599614/
imec.availabilityPublished - open access


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