dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Martens, Koen | |
dc.contributor.author | Lin, Dennis | |
dc.contributor.author | Mocuta, Anda | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Thean, Aaron | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-23T15:49:16Z | |
dc.date.available | 2021-10-23T15:49:16Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/27425 | |
dc.source | IIOimport | |
dc.title | An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Martens, Koen | |
dc.contributor.imecauthor | Lin, Dennis | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Thean, Aaron | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Martens, Koen::0000-0001-7135-5536 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 4707 | |
dc.source.endpage | 4713 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 12 | |
dc.source.volume | 63 | |
dc.identifier.url | http://ieeexplore.ieee.org/document/7731244/ | |
imec.availability | Published - open access | |