Show simple item record

Impact of gate stack layer composition on dynamic threshold voltage and analog parameters of Ge pMOSFETs

dc.contributor.authorVinicius de Oliveira, Alberto
dc.contributor.authorAgopian, G.D.
dc.contributor.authorMartino, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMertens, Hans
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T16:51:40Z
dc.date.available2021-10-23T16:51:40Z
dc.date.issued2016
dc.identifier.issn1807-1953
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27550
dc.sourceIIOimport
dc.titleImpact of gate stack layer composition on dynamic threshold voltage and analog parameters of Ge pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage7
dc.source.endpage12
dc.source.journalJournal of Integrated Circuits and Systems
dc.source.issue1
dc.source.volume11
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record