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dc.contributor.authorVinicius de Oliveira, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGhedini Der Agopian, Paula
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T16:53:14Z
dc.date.available2021-10-23T16:53:14Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27553
dc.sourceIIOimport
dc.titleLow frequency noise and fin width study of Si passivated Ge pFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC Symposium I: Device Engineering and Technology
dc.source.conferencedate13/03/2016
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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