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Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²

dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorPeter, Antony
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorRosseel, Erik
dc.contributor.authorLee, Joon-Gon
dc.contributor.authorSong, Woo-Bin
dc.contributor.authorShin, Keo Myoung
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDemuynck, Steven
dc.contributor.authorKim, Daeyong
dc.contributor.authorBarla, Kathy
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-23T17:38:57Z
dc.date.available2021-10-23T17:38:57Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27641
dc.sourceIIOimport
dc.titleTitanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²
dc.typeJournal article
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPeter, Antony::0000-0001-5941-0563
dc.contributor.orcidimecEveraert, Jean-Luc::0000-0002-0660-9090
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4632
dc.source.endpage4641
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7725953/
imec.availabilityPublished - imec


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