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Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?

dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorRosseel, Erik
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorEyben, Pierre
dc.contributor.authorChiarella, Thomas
dc.contributor.authorMerckling, Clement
dc.contributor.authorAgarwal Kumar, Tarun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorKubicek, Stefan
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorMitard, Jerome
dc.contributor.authorWaldron, Niamh
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDemuynck, Steven
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorMocuta, Anda
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-23T17:39:44Z
dc.date.available2021-10-23T17:39:44Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27642
dc.sourceIIOimport
dc.titleHeterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
dc.typeProceedings paper
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage604
dc.source.endpage607
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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