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Nucleation of Al2O3 atomic layer deposition on MoS2, a two-dimensional semiconductor

dc.contributor.authorZhang, Haodong
dc.contributor.authorChiappe, Daniele
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorRadu, Iuliana
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDelabie, Annelies
dc.date.accessioned2021-10-23T17:46:32Z
dc.date.available2021-10-23T17:46:32Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27655
dc.sourceIIOimport
dc.titleNucleation of Al2O3 atomic layer deposition on MoS2, a two-dimensional semiconductor
dc.typeMeeting abstract
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.conferenceChemical Research in Flanders - CRF - 1
dc.source.conferencedate24/10/2016
dc.source.conferencelocationBlankenberge Belgium
imec.availabilityPublished - imec


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