dc.contributor.author | Zhang, Jian | |
dc.contributor.author | Yu, Hao | |
dc.contributor.author | Schaekers, Marc | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Wang, Linlin | |
dc.contributor.author | Jiang, Yulong | |
dc.date.accessioned | 2021-10-23T17:47:02Z | |
dc.date.available | 2021-10-23T17:47:02Z | |
dc.date.issued | 2016 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/27656 | |
dc.source | IIOimport | |
dc.title | Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Zhang, Jian | |
dc.contributor.imecauthor | Yu, Hao | |
dc.contributor.imecauthor | Schaekers, Marc | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Yu, Hao::0000-0002-1976-0259 | |
dc.contributor.orcidimec | Schaekers, Marc::0000-0002-1496-7816 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 525 | |
dc.source.endpage | 527 | |
dc.source.conference | 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT | |
dc.source.conferencedate | 25/10/2016 | |
dc.source.conferencelocation | Hangzhou China | |
dc.identifier.url | http://ieeexplore.ieee.org/document/7998968/ | |
imec.availability | Published - open access | |