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Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform

dc.contributor.authorZhou, Daisy
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorSebaai, Farid
dc.contributor.authorMerckling, Clement
dc.contributor.authorEneman, Geert
dc.contributor.authorSioncke, Sonja
dc.contributor.authorNyns, Laura
dc.contributor.authorOpdebeeck, Ann
dc.contributor.authorMaes, Jan
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, M
dc.contributor.authorTang, F
dc.contributor.authorJiang, X
dc.contributor.authorGuo, Weiming
dc.contributor.authorKunert, Bernardette
dc.contributor.authorTeugels, Lieve
dc.contributor.authorDevriendt, Katia
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorFranco, Jacopo
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorBarla, Kathy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T17:57:15Z
dc.date.available2021-10-23T17:57:15Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27674
dc.sourceIIOimport
dc.titleScalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform
dc.typeProceedings paper
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorOpdebeeck, Ann
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage166
dc.source.endpage167
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate12/06/2016
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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