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Comparison between Vacuum Ultra-Violet emission of CF4/Ar and CF3I/Ar plasmas in CCP chamber for low-k etching

dc.contributor.authorZotovich, Alexey
dc.contributor.authorEl Otell, Ziad
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorProshina, Olga
dc.contributor.authorLopaev, Dimitri
dc.contributor.authorRakhimova, Tatyana
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-23T18:00:22Z
dc.date.available2021-10-23T18:00:22Z
dc.date.issued2016
dc.identifier.issn0963-0252
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27680
dc.sourceIIOimport
dc.titleComparison between Vacuum Ultra-Violet emission of CF4/Ar and CF3I/Ar plasmas in CCP chamber for low-k etching
dc.typeJournal article
dc.contributor.imecauthorEl Otell, Ziad
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.source.peerreviewyes
dc.source.beginpage55001
dc.source.journalPlasma Sources Science and Technology
dc.source.issue5
dc.source.volume25
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0963-0252/25/5/055001/meta
imec.availabilityPublished - imec


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