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Excess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubes

dc.contributor.authorMeynants, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.contributor.authorJones, S.
dc.contributor.authorPolce, N.
dc.contributor.authorBlackstone, S.
dc.date.accessioned2021-10-01T08:30:35Z
dc.date.available2021-10-01T08:30:35Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2769
dc.sourceIIOimport
dc.titleExcess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubes
dc.typeProceedings paper
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage257
dc.source.endpage263
dc.source.conferenceProceedings of the 4th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 97-36


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