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Switching behavior of HfO2-based resistive RAM with vertical CNT bottom electrode

dc.contributor.authorAvasarala, Naga Sruti
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Malgorzata
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHeyns, Marc
dc.contributor.authorvan der Veen, Marleen
dc.date.accessioned2021-10-24T02:53:54Z
dc.date.available2021-10-24T02:53:54Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27778
dc.sourceIIOimport
dc.titleSwitching behavior of HfO2-based resistive RAM with vertical CNT bottom electrode
dc.typeProceedings paper
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Memory Workshop - IMW
dc.source.conferencedate15/05/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7939107/
imec.availabilityPublished - imec


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