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Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures

dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, J.A.
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T03:05:25Z
dc.date.available2021-10-24T03:05:25Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27895
dc.sourceIIOimport
dc.titleAnalysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage109
dc.source.endpage112
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS
dc.source.conferencedate3/04/2017
dc.source.conferencelocationAthens Greece
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7962614/
imec.availabilityPublished - open access


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