Show simple item record

The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, Joao
dc.contributor.authorAgopian, Paula
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T03:05:34Z
dc.date.available2021-10-24T03:05:34Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27896
dc.sourceIIOimport
dc.titleThe influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs
dc.typeJournal article
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3595
dc.source.endpage3600
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8000584/
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
35523.pdf
Size:
1.846Mb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record