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The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs
Publication:
The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs
Date
2017
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bordallo, Caio
;
Martino, Joao
;
Agopian, Paula
;
Alian, AliReza
;
Mols, Yves
;
Rooyackers, Rita
;
Vandooren, Anne
;
Verhulst, Anne
;
Simoen, Eddy
;
Claeys, Cor
;
Collaert, Nadine
Journal
IEEE Transactions on Electron Devices
Abstract
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1870
since deposited on 2021-10-24
Acq. date: 2025-10-29
Citations
Metrics
Views
1870
since deposited on 2021-10-24
Acq. date: 2025-10-29
Citations