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The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

Date

2017
Journal article
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dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, Joao
dc.contributor.authorAgopian, Paula
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T03:05:34Z
dc.date.available2021-10-24T03:05:34Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27896
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8000584/
dc.source.beginpage3595
dc.source.endpage3600
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

dc.typeJournal article
dspace.entity.typePublication
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