The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion  InxGa1-xAs nTFETs

Bordallo, Caio; Martino, Joao; Agopian, Paula; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine

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The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

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2017

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IEEE Transactions on Electron Devices

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Acq. date: 2026-04-05

The influence of oxide thickness and indium amount on the analog parameters of gas phase Zn diffusion InxGa1-xAs nTFETs

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