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Impact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K

dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, Joao
dc.contributor.authorAgopian, Paula
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T03:05:43Z
dc.date.available2021-10-24T03:05:43Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27897
dc.sourceIIOimport
dc.titleImpact of the Zn diffusion process at the source side of a InXGa1-XAs nTFET on the analog parameters down to 10 K
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage8.2
dc.source.conferenceIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S
dc.source.conferencedate16/10/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8309256/
imec.availabilityPublished - imec


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