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Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology

dc.contributor.authorBoudier, Dimitri
dc.contributor.authorCretu, Bogdan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCarin, Regis
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-24T03:07:01Z
dc.date.available2021-10-24T03:07:01Z
dc.date.issued2017
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27907
dc.sourceIIOimport
dc.titleLow frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage102
dc.source.endpage108
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume128
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110116301757
imec.availabilityPublished - imec


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