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SIMS analysis on the transistor scale: probing composition and dopants in non-planar, confined 3D-volumes

dc.contributor.authorBudrevich, Andre A.
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-24T03:11:28Z
dc.date.available2021-10-24T03:11:28Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27938
dc.sourceIIOimport
dc.titleSIMS analysis on the transistor scale: probing composition and dopants in non-planar, confined 3D-volumes
dc.typeBook chapter
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewyes
dc.source.beginpage153
dc.source.bookMetrology and diagnostic techniques for Nanoelectronics
dc.source.endpage206
dc.identifier.urlwww.panstanford.com
imec.availabilityPublished - imec
imec.internalnotesISBN 9789814745086


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