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Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

dc.contributor.authorChai, Zheng
dc.contributor.authorMa, Jigang
dc.contributor.authorZhang, Weidong
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-24T03:22:29Z
dc.date.available2021-10-24T03:22:29Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27998
dc.sourceIIOimport
dc.titleProbing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4099
dc.source.endpage4105
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8019848/
imec.availabilityPublished - open access


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