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Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells

dc.contributor.authorCho, Jinyoun
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorRecaman Payo, Maria
dc.contributor.authorMalik, Shuja
dc.contributor.authorFilipic, Miha
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorBearda, Twan
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-24T03:28:25Z
dc.date.available2021-10-24T03:28:25Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28029
dc.sourceIIOimport
dc.titleContact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells
dc.typeProceedings paper
dc.contributor.imecauthorCho, Jinyoun
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorRecaman Payo, Maria
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage842
dc.source.endpage850
dc.source.conference7th International Conference on Silicon Photovoltaics - SiliconPV
dc.source.conferencedate3/04/2017
dc.source.conferencelocationFreiburg Germany
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1876610217343394
imec.availabilityPublished - open access
imec.internalnotesEnergy Procedia; Vol. 124


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