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Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

dc.contributor.authorChvála, Aleš
dc.contributor.authorMarek, Juraj
dc.contributor.authorPríbytnŭ, Patrik
dc.contributor.authorŠatka, Alexander
dc.contributor.authorDonoval, Daniel
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T03:29:37Z
dc.date.available2021-10-24T03:29:37Z
dc.date.issued2017-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28035
dc.sourceIIOimport
dc.titleElectrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage253
dc.source.endpage256
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate7/09/2017
dc.source.conferencelocationKamakura Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8085312/
imec.availabilityPublished - open access


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