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dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorOpsomer, Karl
dc.contributor.authorVelea, Alin
dc.contributor.authorAvasarala, Naga Sruti
dc.contributor.authorDevulder, Wouter
dc.contributor.authorShlyakhov, I.
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorWitters, Thomas
dc.contributor.authorKundu, Shreya
dc.contributor.authorGoux, Ludovic
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-24T03:32:10Z
dc.date.available2021-10-24T03:32:10Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28047
dc.sourceIIOimport
dc.titleAtomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich GexSe1-x materials for selector applications
dc.typeProceedings paper
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage79
dc.source.endpage82
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan-Francisco, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8268323/
imec.availabilityPublished - open access


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