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Irradiation Induced Lattice Defects in Si1-xGex Devices and Their Effect on Device Performance

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T12:44:47Z
dc.date.available2021-09-29T12:44:47Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/280
dc.sourceIIOimport
dc.titleIrradiation Induced Lattice Defects in Si1-xGex Devices and Their Effect on Device Performance
dc.typeOral presentation
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference1st International Conference on Materials for Microelectronics
dc.source.conferencedate17/10/1994
dc.source.conferencelocationBarcelona Spain
imec.availabilityPublished - open access
imec.internalnotesto be pub:l Materials Science and Technology 11(1995)429-435


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