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The impact of the Ge content on the characteristics of strained Si1-xGex epitaxial diodes before and after degradation by high energy particles
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The impact of the Ge content on the characteristics of strained Si1-xGex epitaxial diodes before and after degradation by high energy particles
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1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ohyama, Hidenori
;
Simoen, Eddy
;
Claeys, Cor
;
Takami, Y.
;
Hayama, Kiyoteru
;
Hakata, T.
;
Kobayashi, K.
;
Sunaga, H.
;
Poortmans, Jef
;
Caymax, Matty
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1857
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Acq. date: 2025-12-16
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Views
1857
since deposited on 2021-10-01
4
last month
Acq. date: 2025-12-16
Citations