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Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

dc.contributor.authorDuan, Meng
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorKaczer, Ben
dc.contributor.authorAsenov, Asen
dc.date.accessioned2021-10-24T04:28:06Z
dc.date.available2021-10-24T04:28:06Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28281
dc.sourceIIOimport
dc.titleKey issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage2478
dc.source.endpage2484
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue6
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7912321
imec.availabilityPublished - imec


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