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Evaluation of different Ge epitaxial growth schemes for Ge VS with reduced TDD

dc.contributor.authorFakhimi, Parastou
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorBerger, Paul
dc.date.accessioned2021-10-24T04:40:03Z
dc.date.available2021-10-24T04:40:03Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28322
dc.sourceIIOimport
dc.titleEvaluation of different Ge epitaxial growth schemes for Ge VS with reduced TDD
dc.typeOral presentation
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceSeminar at Ohio State University, Department of Electrical and Computer Engineering
dc.source.conferencedate16/02/2017
dc.source.conferencelocationColumbus, OH USA
imec.availabilityPublished - open access


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