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Time-resolved photoluminescence study of different Ge epitaxial growth schemes for Ge virtual substrates with reduced threading dislocation density

dc.contributor.authorFakhimi, Parastou
dc.contributor.authorPorret, Clément
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorLoo, Roger
dc.contributor.authorBerger, Paul
dc.date.accessioned2021-10-24T04:40:21Z
dc.date.available2021-10-24T04:40:21Z
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28323
dc.sourceIIOimport
dc.titleTime-resolved photoluminescence study of different Ge epitaxial growth schemes for Ge virtual substrates with reduced threading dislocation density
dc.typeMeeting abstract
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage191
dc.source.endpage192
dc.source.conference10th International Conference on Silicon Epitaxy and heterostructures
dc.source.conferencedate14/05/2017
dc.source.conferencelocationCoventry UK
imec.availabilityPublished - imec


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