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Reliability study of ferroelectric Al:HfO2 thin films for DRAM and NAND applications

dc.contributor.authorFlorent, Karine
dc.contributor.authorLavizzari, Simone
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-24T04:45:35Z
dc.date.available2021-10-24T04:45:35Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28340
dc.sourceIIOimport
dc.titleReliability study of ferroelectric Al:HfO2 thin films for DRAM and NAND applications
dc.typeJournal article
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage4091
dc.source.endpage4098
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8023826/
imec.availabilityPublished - imec


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