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dc.contributor.authorFlorent, Karine
dc.contributor.authorLavizzari, Simone
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorCelano, Umberto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-24T04:46:36Z
dc.date.available2021-10-24T04:46:36Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28343
dc.sourceIIOimport
dc.titleUnderstanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
dc.typeJournal article
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage204103
dc.source.journalJournal of Applied Physics
dc.source.issue20
dc.source.volume121
dc.identifier.urlhttp://aip.scitation.org/doi/abs/10.1063/1.4984068
imec.availabilityPublished - imec


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