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Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT

dc.contributor.authorGaur, Abhinav
dc.contributor.authorBalaji, Yashwanth
dc.contributor.authorLin, Dennis
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorHeyns, Marc
dc.contributor.authorMocuta, Dan
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-24T04:57:08Z
dc.date.available2021-10-24T04:57:08Z
dc.date.issued2017
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28375
dc.sourceIIOimport
dc.titleDemonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
dc.typeJournal article
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorBalaji, Yashwanth
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.source.peerreviewyes
dc.source.beginpage145
dc.source.endpage149
dc.source.journalMicroelectronic Engineering
dc.source.volume178
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931717302034
imec.availabilityPublished - imec
imec.internalnotesSpecial issue 'Insulating Films on Semiconductors - INFOS' Conference


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