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Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorOpsomer, Karl
dc.contributor.authorDevulder, Wouter
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorWitters, Thomas
dc.contributor.authorClima, Sergiu
dc.contributor.authorAvasarala, Naga Sruti
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorKundu, Shreya
dc.contributor.authorRichard, Olivier
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-24T05:12:21Z
dc.date.available2021-10-24T05:12:21Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28420
dc.sourceIIOimport
dc.titleThermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage92
dc.source.endpage93
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998207/
imec.availabilityPublished - open access


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