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dc.contributor.authorPangon, Nadège
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorCrupi, Felice
dc.date.accessioned2021-10-01T08:38:20Z
dc.date.available2021-10-01T08:38:20Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2844
dc.sourceIIOimport
dc.titleA new physically-based model for temperature acceleration of time-to-breakdown
dc.typeOral presentation
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.conference29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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