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Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors

dc.contributor.authorHe, Liang
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorWang, Guilei
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorLi, Junfeng
dc.contributor.authorChen, Hua
dc.contributor.authorHu, Yin
dc.contributor.authorQin, Xiaoting
dc.date.accessioned2021-10-24T05:32:57Z
dc.date.available2021-10-24T05:32:57Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28476
dc.sourceIIOimport
dc.titleLow frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate12/03/2017
dc.source.conferencelocationShanghai China
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7919856/
imec.availabilityPublished - open access


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