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Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

dc.contributor.authorHellings, Geert
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorFranco, Jacopo
dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRoussel, Philippe
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorBoschke, Roman
dc.date.accessioned2021-10-24T05:34:47Z
dc.date.available2021-10-24T05:34:47Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28481
dc.sourceIIOimport
dc.titleDemonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
dc.typeProceedings paper
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpageFA-5.1
dc.source.endpageFA-5.4
dc.source.conferenceIEEE International Reliability Physics symposium - IRPS
dc.source.conferencedate1/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936375/
imec.availabilityPublished - imec


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