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Application of group IV epitaxy for production of gate all around transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorMertens, Hans
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T05:46:44Z
dc.date.available2021-10-24T05:46:44Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28514
dc.sourceIIOimport
dc.titleApplication of group IV epitaxy for production of gate all around transistors
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.conference10th International Conference On Silicon Epitaxy And Heterostructures - ICSI-10
dc.source.conferencedate14/05/2017
dc.source.conferencelocationWarwick UK
imec.availabilityPublished - imec


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