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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorTallarico, Andrea Natale
dc.contributor.authorRossetto, Isabella
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorKaczer, Ben
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-24T05:58:00Z
dc.date.available2021-10-24T05:58:00Z
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28542
dc.sourceIIOimport
dc.titleTime-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage371
dc.source.endpage374
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume38
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7836313/
imec.availabilityPublished - open access


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