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dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorTyaginov, S. E.
dc.contributor.authorJech, M.
dc.contributor.authorRzepa, G.
dc.contributor.authorGrasser, T.
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorSpessot, Alessio
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T06:28:08Z
dc.date.available2021-10-24T06:28:08Z
dc.date.issued2017
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28617
dc.sourceIIOimport
dc.titleMapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage01A109
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume35
dc.identifier.urlhttp://avs.scitation.org/doi/full/10.1116/1.4972872
imec.availabilityPublished - imec


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