dc.contributor.author | Kikuchi, Yoshiaki | |
dc.contributor.author | Chiarella, Thomas | |
dc.contributor.author | De Roest, David | |
dc.contributor.author | Kenis, Karine | |
dc.contributor.author | Ong, Patrick | |
dc.contributor.author | Horiguchi, Naoto | |
dc.date.accessioned | 2021-10-24T06:53:50Z | |
dc.date.available | 2021-10-24T06:53:50Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/28677 | |
dc.source | IIOimport | |
dc.title | The improvement of subthreshold slope and trans-conductance of P-type bulk Si field-effect-transistors by solid-source doping | |
dc.type | Journal article | |
dc.contributor.imecauthor | Kikuchi, Yoshiaki | |
dc.contributor.imecauthor | Chiarella, Thomas | |
dc.contributor.imecauthor | De Roest, David | |
dc.contributor.imecauthor | Kenis, Karine | |
dc.contributor.imecauthor | Ong, Patrick | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.orcidimec | Chiarella, Thomas::0000-0002-6155-9030 | |
dc.contributor.orcidimec | Ong, Patrick::0000-0002-2072-292X | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 2492 | |
dc.source.endpage | 2497 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 6 | |
dc.source.volume | 64 | |
dc.identifier.url | http://ieeexplore.ieee.org/document/7907254/ | |
imec.availability | Published - imec | |